Effect of elastic disorder on single-electron transport through a buckled nanotube

We study transport properties of a single electron transistor based on elastic nanotube. Assuming that an external compressive force is applied to the nanotube, we focus vicinity Euler buckling instability. demonstrate in this regime through extremely sensitive disorder. In particular, built-in curvature (random or regular) leads ``elastic blockade'': appearance threshold bias voltage $I$-$V$ curve which can be larger than Coulomb-blockade-induced one. case random curvature, additional plateau dependence average current appears.